2013 Volume 82 Issue 4 Pages 317-321
It is indispensable to control the strain based on a detailed analysis and evaluation to realize a high-performance LSI. In the present study, we improved the spatial resolution of Raman spectroscopy using quasi-line shape laser excitation, a high NA liquid emersion lens, super-resolution using digital signal processing and peak extraction techniques. The strain analyses were performed for patterned SiN film, a gate-last pMOSFET with various gate lengths, a commercial 32nm-node-LSI and SSOI/SGOI substrates with and without patterning. We clarified the mechanism of the strain introduction in the MOSFET and observed a huge strain induced in the advanced LSI. We also proposed a multi-axis strain evaluation technique using a high-NA objective lens. Moreover, a SERS evaluation was proposed to save exposure time for the multi-axis evaluation.
