Control of plasma for a large sputtering cathode for FPD

Abstract

Methods such as sputtering and PECVD (plasma enhanced chemical vapor deposition) can form high quality film on a large-size substrate. In order to achieve a film with good uniformity and performance, it is very important to control the plasma gradient over the substrate. This technique to control plasma is widespread and an essential core technology for the production process of semiconductor elements, power devices, light emitting diodes (LEDs), magnetic recording media, photovoltaic cells and flat panel displays (FPD). Especially in the FPD process, with the substrate size over 3 meters, the technology for controlling plasma has experienced significant development. In this study, we suggest a method for controlling plasma in the sputtering process for metal and pixel electrode deposition and discuss a large-area sputtering system for forming a transparent oxide semiconductor (TOS), which has attracted a lot of attention recently.