New compound semiconductor gamma-ray detectors

Abstract

Thallium bromide (TlBr) is a promising compound semiconductor for the fabrication of room-temperature gamma-ray detectors. The attractive physical properties of TlBr lie in its high photon stopping power, high resistivity and good charge transport properties. In this paper, recent developments with TlBr detectors are reviewed with emphasis on the crystal growth and detector fabrication processes, and the spectroscopic performance of pixelated TlBr detectors.