2015 Volume 84 Issue 2 Pages 118-123
Layered transition-metal dichalcogenides (TMD), known as 2D semiconductors, have recently been revisited. We show that the electronic properties of a single-layered TMD can indeed be altered by doping or alloying, and their structures have been revealed with atomic precision. We have also demonstrated that the phase transitions among polymorphic phases with different properties can be controllably triggered by an electron beam, and that the fabrication of nano-devices within single-layer MoS2 indeed becomes possible under the TEM observations.
