2016 Volume 85 Issue 2 Pages 113-117
GaAs1-xBix and its related alloys open up a new path to exploit metastable alloys exhibiting a particular property such as luminescence with a temperature-insensitive wavelength. The surfactant-like effect of Bi atoms contributes to an improvement in quality of GaAs1-xBix under extreme growth conditions outside the conventional one for high-quality III-V semiconductors. GaAs0.905Bi0.095 emits a bright photoluminescence at a wavelength of 1.3µm without an intensity degradation compared to GaAs1-xBix (x < 9.5%). A lasing emission of up to 1.2 and 1.05µm was demonstrated in photo- and electrically-pumped GaAs1-xBix lasers, respectively at room temperature. Laser-quality GaAs1-xBix alloys can be grown by molecular beam epitaxy under low temperature conditions.
