Ni micro-plating bonding for power device interconnection

Abstract

The improvement of interconnection technology is becoming a top priority for the operation of high power devices such as SiC devices, at higher temperatures. We proposed a new interconnection method using nickel electroplating to form bonds between the chip electrodes and Cu substrates or Cu leads of lead-frames. The reliability of the bonds was considered from the viewpoint of the Ni/Cu interface behavior through inter-diffusion, surface stability of Ni deposited on Cu, and the Ni/Ni connection at elevated temperatures. SiC devices assembled with the Ni plating interconnection were confirmed to operate successfully in a high temperature environment over 300°C.