Ultra-low power integrated circuits using tunnel field-effect transistors

Abstract

Tunnel field-effect transistors (TFET) are one of the candidates for replacing conventional MOSFETs to realize an ultra-low power LSI. The most significant issue concerns their low ON current, for which one of the solutions is taking advantage of new channel materials such as Ge or III-V. Si is not favored for the channel because Si is an indirect-gap material having a low band-to-band tunneling probability. However, a new technology to enhance the ON current in Si-TFETs utilizing isoelectronic trap (IET) technology was recently proposed, which opens the door to enhanced ON current in Si-TFETs. This article outlines the ongoing TFET research and briefly discusses the IET technology.