2019 Volume 88 Issue 12 Pages 802-806
STT-MRAM is a nonvolatile memory using current-induced magnetization switching. For memory usage it is desirable that the switching probability changes sharply from 0% to 100% at the threshold switching current, nevertheless the switching probability changes gradually as the current increases. We could make a physical random number generator, named spin dice, using the controllability of the switching probability from current-induced magnetization switching. The elements of the spin dice are the same as that of an STT-MRAM. Spin dice could become a scalable physical random number generator.