Ultra-high voltage equipment applications using SiC power devices

Abstract

SiC power devices have advantages such as low loss high-speed switching, high voltage handling, and high-temperature operation compared to existing devices when MOSFETs are manufactured by taking advantage of their physical characteristics. The only device that can switch at high speed under high voltage is the SiC MOSFET. By developing applications that make the best use of this advantage, it can be expected to be applied to applications that have not been possible with semiconductors, or that have had major problems even if they have been realized.

We have proposed and demonstrated a method that enables unprecedented high-speed operation of ultra-high voltage equipment by utilizing the excellent characteristics of SiC power devices.