Nanocarbon-based optoelectronic devices on silicon chips

Abstract

Nano-carbon materials such as carbon nanotubes (CNTs) and graphene are promising candidates for next-generation optoelectronic devices on silicon chips, which is difficult to achieve with compound semiconductors, owing to their unique electronic, optical and thermal properties. In this paper, we introduce graphene black-body radiation emitting devices, EL emitting devices using semiconducting CNTs film, CNT based single-photon sources at room temperature and telecommunication wavelength, and CNT photoluminescence devices combined with silicon photonics. In addition, we also discuss the prospects of nanocarbon optoelectronic devices for integrated optical devices and quantum information devices on silicon chips.