Evaluation methods of channel mobility in MOSFETs

Abstract

Evaluation methods of “channel mobility” in the inversion layer of the metal-oxide-semiconductor field-effect transistors (MOSFETs) are discussed, which is one of the physical properties that is significantly related to flow of charges. With the help of fundamental and well-established knowledge in the Si devices, the mechanism of electron scattering in that layer of SiC MOSFETs is investigated by analyzing the evaluated channel mobilities.