Fabrication of visible-light transparent devices using nickel oxide (NiO)

Abstract

Nickel oxide (NiO) is a wide bandgap oxide semiconductor and functional material because it exhibits p-type conductivity, high absorption coefficient, and relatively low ionization potential. Therefore, it is a promising candidate in novel applications including “invisible” solar cells, sensors, transistors, and hole-injection layers. In this paper, the fundamental properties of NiO thin films deposited by conventional RF magnetron sputtering, as well as various visible-light transparent devices using NiO such as solar cells, IoT monolithic gas sensors, and “self-powered devices” are introduced. Moreover, the robustness of devices that use NiO, such as radiation resistance, is also mentioned.