＋α research techniques for MOS interface trap characterization by charge pumping method

Abstract

The charge pumping method is a technique used to evaluate oxide/semiconductor interface traps in MOSFETs. The interface trap density is calculated from the substrate current flowing when repetitive pulses are applied to the gate. The charge pumping characteristics of MOSFETs using new materials are often quite different from those of Si MOSFETs due to the high trap density at the interface and/or in the oxide. Here, we introduce the key points of evaluating the interface characteristics using the charge pumping methods, including the effect of pulse condition and MOSFET structure, and the use of a 3-level pulse, focusing on the measurement results of SiC MOSFETs.