Diamond field-effect transistor

Abstract

Diamond exhibits unique properties enabling the fabrication of high-performance p-channel field-effect transistors, an achievement that remains challenging for other wide-bandgap semiconductors. This distinct potential thus positions diamond as an exceptional semiconductor material for the realization of complementary power inverters and advancements in power electronics. This paper provides a comprehensive review of the progress in diamond field-effect transistors, with a particular emphasis on the diamond/gate insulator interface and its critical influence on device performance.