On the Mechanism of Characteristic Electric Conduction of Semi-Conductors

Abstract

In order to deal with the phenomena in semi-conductors, following hypotheses are introduced:
1) Besides excitations caused by light and heat, excitation by collision between the carrier and the lattice occurs comparatively easily, the chance of which being in proportion to the density of electric current.
2) When a portion of semi-conductor is excited, the potential of that portion becomes higher for the majority carrier than the rest of the semi-conductor.
According to the above hypotheses, physical explanations of the “hole injection” and the “surface barrier” are attempted. They make it possible to give a unique and consistent interpretation of the working mechanism of such as crystal diodes, metal rectifiers and transistors. A model for the blocking layer of metal rectifier is worked out and experiments are made for its verification.