Some Properties on Silica Film made by R. F. Plasma Sputtering

Abstract

Direct deposition of silica films can be achieved by using R. F. Plasma Sputtering. This paper describes some physical properties of these films, such as temperature dependency of D. C. resistivity, dielectric property, infrared absorption and ultraviolet absorption. Dielectric constant and loss factor are measured over a frequency range from 10^-1 H_z to 5MH_z. For all frequencies, the dielectric constant is about 4.5 while tan δ varies from 4×10^-3 to 10^-3 No loss peaks are observed. The resistivity of r. f. sputtered silica film exhibits a higher value than that of silica films produced by other methods. It is found to be about 2×lO¹⁸Ωcm at room temperature. The positions of the Si-O vibrational bands in the infrared spectra are 9.3-9.4μ and 12.5μ.