Abstract
Experimental study has been made on liquid phase epitaxy of GaAs multiple layers grown by a single process using a sliding boat consisting of two graphite blocks. On the epitaxial layers made by this process, each layer was quite uniform in its thickness, and the surface un-dulation was less than 500 A. Mereover the thickness of each layer was controlled within an error of 0.5μ.
By introducing a purging process before growing the high purity n-layer, the electron concentration between 1015_??_1616 cm-3 was controlled to within 20% by the amount of Sn in Ga solution. Moreover, the electron concentration was almost constant in the n-layer, and the transition of the electron concentration between n- and n+-layer was sharp, where no dip in the concentration profile was detected.
Millimeter-wave Gunn diodes were made using crystals made by this liquid phase epitaxy. A maximum CW output power of 67mW was obtained at 57 GHz with an efficiency of 3.1%.
