Abstract
It is important to make insitu observation of reaction processes experimentally to know the reaction kinetics and to automate crystal growth processes.
Recently Xray topography becomes to be used for insitu observation for melt growth processes in crystal growth.
IR absorption spectroscopy as well as emission spectroscopy, enable one to make insitu observation of the reaction processes, much better than mass spectroscopy and Raman spectroscopy.
Applying these spectroscopies in silicon CVD, as an example, at least four sorts of intermediate compounds are observed to form some distributions in the case of reduction of SiCI4 by H2, and SiCI2 has an important role in silicon deposition processes.
The gas injection in the reaction processes also seems very useful to know the details of reactions.
These can be applied formany purposes, as an example control of plasma etching.
