Oyo Buturi
Online ISSN : 2188-2290
Print ISSN : 0369-8009
Initial Growth Mechanism and Antiphase Boundary of GaAs Grown on Si
Mitsuo KAWABE
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Keywords: heteroepitaxy, lattice mismatch, gallium arsenide on silicon, polar on non-polar, antiphase boundary, atomic step
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1988 Volume 57 Issue 11 Pages 1748-1753

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[in Japanese]

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