Oyo Buturi
Online ISSN : 2188-2290
Print ISSN : 0369-8009
Theoretical Study on Silicon Vapor Phase Epitaxial Growth by Using Ab Initio Molecular Orbital Methods
Akihiko ISHITANI, Yoshio OHSHITA, Toshikazu TAKADA
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Keywords: molecular orbital method, silicon, epitaxial growth, adsorption, dichrolosilane
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1988 Volume 57 Issue 7 Pages 1022-1034

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[in Japanese]

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© The Japan Society of Applied Physics
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