Oyo Buturi
Online ISSN : 2188-2290
Print ISSN : 0369-8009
Analysis of Defects near the Surface and the Interface of Semiconductors by Monoenergetic Positron Beam
Akira UEDONO, Shoichiro TANIGAWA
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Keywords: monoenergetic positron beam, defect, surface, interface, ion-implantation, silicon, insulator-semiconductor interface, diamond film
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1989 Volume 58 Issue 6 Pages 918-923

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[in Japanese]

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© The Japan Society of Applied Physics
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