Oyo Buturi
Online ISSN : 2188-2290
Print ISSN : 0369-8009
Three-terminal silicon surface junction tunneling device
Junji KOGA, Akira TORIUMI
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Keywords: silicon, surface junction tunneling, negative differential conductance, gate-controlled latch characteristics, room temperature operation, low power, SOI, SIMOX, functionality
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1998 Volume 67 Issue 7 Pages 822-825

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[in Japanese]

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