Measurement of Soft Error Cross Sections from 10-meV to 800-MeV Neutrons by Time-of-Flight

Abstract

We successfully measured semiconductor soft error cross sections at continuously varying neutron energies from 10 meV to 800 MeV, where measurements have not previously been made. The findings reveal, for the first time, a complete picture of the energy dependence of semiconductor soft errors. Taking countermeasures against soft errors, which are malfunctions caused by cosmic rays (solar flares and radiation from galaxies), is essential for electronic devices that support our current social infrastructures. Elucidating the soft error cross section for different neutron energies is of prime importance for studying such countermeasures. Going forward, further developments of soft error countermeasures based on these results will lead to safer and more secure social infrastructures.