2009 Volume 6 Issue 2 Pages 130-138
This paper describes a long-pulse 1.3 GHz klystron modulator that was recently developed for the Superconducting RF Test Facility (STF) at High Energy Accelerator Research Organization (KEK). The modulator has a directswitched-type design with a 1:15 step-up transformer and a bouncer circuit to compensate the output pulse droop within 土0.5%; it can drive a klystron up to 10 MW peak power, 1.5 ms rf pulse width, and 5 pps repetition rate. The main features of this modulator are four 50 kW switching power supplies in parallel to charge storage capacitors to 10kV, self-healing-type storage capacitors to realize a compact capacitor bank, and a highly reliable IGBT switch which enables elimination of a crowbar circuit. Design considerations and its performance are presented. An IEGT (Injection Enhanced Gate Transistor) switch, composed of six series devices with a rating of 4.5 kV and 2100 A–DC, has been also developed and tested for R&D to realize a compact modulator.
