Sintering and crystal growth of SiC by SPS

Abstract

SiC powders have been sintered with additives such as B-C, Al₂O₃, Al₂O₃-Y₂O₃ and so on. SiC single crystal is grown by vapor and deposition of SiC at high temperature near 2500°C. The spark plasma system (SPS) is characterized by a electric source of pulsed direct current and has good effects for sintering and crystal growth. A dense compact was prepared without sintering additives by SPS. The enhancement of SiC crystal growth was observed when fine SiC powders were sintered.