Thermoelectric property of InGaO₃

Abstract

We have found that InGaO₃ has a good thermoelectric property by the first principle calculation. It It an n-type semiconductor with layer structure. In fact, the observed Seebeck coefficient is 220μV/K, electric conductivity is 40-25S/cm at 875-1273K, coefficient of thermal conductivity is 2.6W/m·K at 1273K and dimensionless figure of merit ZT becomes 0.07 at 1273K. Although ZT is still low, we expect that this material has high potential as a high temperature thermoelectric material. The first principle calculation is quite useful for designing materials.