Microstructural Characterization of High Thermal Conductivity Silicon Nitride Ceramics

Hiroyuki Hayashi; Hiromi Nakano; Kazuyori Urabe; Kiyoshi Hirao

doi:10.14853/pcersj.2002F.0.56.0

15th Fall Meeting of The Ceramic Society of Japan

DOI https://doi.org/10.14853/pcersj.2002F.0.56.0

Conference information

Host: The Ceramic Society of Japan

Microstructural Characterization of High Thermal Conductivity Silicon Nitride Ceramics

Hiroyuki Hayashi, Hiromi Nakano, Kazuyori Urabe, Kiyoshi Hirao

Author information

Keywords: Silicon nitride, Thermal conductivity, Microstructure, TEM, STEM, Grain boundary

CONFERENCE PROCEEDINGS FREE ACCESS

Pages 56

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Abstract

Silicon nitride with Yb₂O₃ and MgO or MgSiN₂ as sintering additives was sintered at 1900°C for 2, 48h under 0.9MPa N₂. The inner part and the surface of sintered Si₃N₄ were observed by SEM and TEM. In addition, microstructure and composition of grain boundary phase were examined by HREM and STEM. The triple point of MgSiN₂ doped Si₃N₄ was different from that of MgO doped Si₃N₄.

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