Effects of deposition conditions on preparation of TiSi₂ thin films by PECVD

Abstract

TiSi₂ thin films have been prepared under different experimental conditions. Homogenous C54-TiSi₂ films with smooth TiSi₂/Si interface deposited at 850 °C of substrate temperature, 200W of RF power and 0.4 sccm of TiCl₄ flow rate. The film morphology became rough with coarse grains at 900 °C. Ti₅Si₃ phase formed at 700 °C. As the deposition temperature increased, the resistivity of the film decreased to reach a minimum of 20 μΩ-cm at 850 °C. Ti₅Si₃ and TiSi formed at the RF power increased up to 400 W. TiCl₄ flow rate significantly affected the film composition. TiSi₂ films showed high selectivity of deposition on Si rather than SiO₂.