Host: The Ceramic Society of Japan
To successfully synthesize CaBi4Ti4O15(CBT) thin films, pre-sintered CBT targets were sputtered at room temperature in pure argon on (111)Pt/Si substrates using r.f. magnetron sputtering, followed by annealing at temperatures from 600oC to 750oC.The CBT films annealed at 600oC, 650oC and 700oC exhibited well established ferroelectric hysteresis loops. Remanant polarization (Pr), coercive field (Ec), dielectric permittivity and dielectric loss all decrease with decreasing temperature at below 700oC, while too high an annealing temperature led to excessive bismuth loss. An Pr of 5.09μC/cm2 and Ec of 48.0kV/cm were measured at 9V for the CBT film annealed at 700oC, with a dielectric permittivity and dielectric loss of 413 and 0.75, respectively. Both Pr and Ec increase from room temperature to 120oC, where an Pr of 6.10μC/cm2 and Ec of 58.0 kV/cm were measured at 9V. The observed ferroelectric behaviors of CBT films are discussed and correlated to their microstructural features.