Low-Temperature Processing of (Bi,Nd)4Ti3O12 Thin Films from Alkoxide Precursors Solution Using Excimer UV Irradiation

Takashi HAYASHI; Naoya IIZAWA; Mio YAMADA; Wataru SAKAMOTO; Koichi KIKUTA; Shin-ichi HIRANO

doi:10.14853/pcersj.2003F.0.339.0

16th Fall Meeting of The Ceramic Society of Japan & The 5th International Meeting of Pacific Rim Ceramic Societies(PacRim5)

Session ID : 06-P-02

DOI https://doi.org/10.14853/pcersj.2003F.0.339.0

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Host: The Ceramic Society of Japan

Low-Temperature Processing of (Bi,Nd)₄Ti₃O₁₂ Thin Films from Alkoxide Precursors Solution Using Excimer UV Irradiation

*Takashi HAYASHI, Naoya IIZAWA, Mio YAMADA, Wataru SAKAMOTO, Koichi KIKUTA, Shin-ichi HIRANO

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Abstract

(Bi,Nd)₄Ti₃O₁₂ (BNT) thin films were prepared on Pt/TiO_x/SiO₂/Si substrates from alkoxide precursors solution using excimer UV irradiation. Organic species of BNT gel films were completely removed at 300^oC by excimer UV irradiation. Excimer UV-processed BNT thin films crystallized at 550^oC and they showed a high crystallinity and a (117) preferred orientation. BNT thin film prepared at 550^oC exhibited a dense and homogeneous microstructure with grain sizes of approximately 150 nm.The films showed a well-saturated P-E hysteresis loop. The P_r and E_c values of BNT thin films were 12.7 μC/cm² and 83 kV/cm, respectively.

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