Abstract
The single crystals of (ZnO)5In2O3 were grown by normal flux method, and the resulting flaky single crystals were very thin along the c-axis. Single crystal quality was evaluated by X-ray diffraction (XRD), TEM, SEM and EDAX. The in-plane electrical conductivity (σ), and Seebeck coefficient (α) were measured in the temperature range of 300 K to 1200 K in air. The electrical conductivity of a single crystal was found to be 2×106 Sm-1 at room temperature, but it decreased with increasing temperature and attained a value of 5×105 Sm-1 at 1200 K. Seebeck coefficient was determined to be -9.6 μVK-1 at 400 K and -31.6 μVK-1 at 1200 K. Seebeck coefficients were always negative, and the single crystal specimens were n-type semiconductors. The estimated power factor was about 1.4×10-4 Wm-1K-2 at 400 K. This factor increased with temperature, and reached the value of 5.3×10-4 Wm-1K-2 at 1200 K.
