Abstract
Porous conductive glass was designed and prepared by depositing transparent conductive film on inner surface of pores and outer surface of porous glass with nano-size pores. In the present study, indium tin oxide (ITO) or tin oxide was deposited on porous glass by metallorganic chemical vapor deposition (MOCVD) or CVD method. Surface area of obtained porous conductive glass is about 10000 times more than that of traditional transparent conductive glass. The film deposited on the outer surface of porous glass is transparent, but the film deposited on the inner surface of the pores is translucent due to scattering of light. This kind of porous conductive glass is expected to provide a huge reaction field for functional materials used in photoelectrochemical devices, which in turn increases device′s function such as light-to-energy transfer efficiency dramatically.
