Crystallization of GaN in its Thermal Decomposition

Abstract

GaN powder in carbon crucible was heated at various temperatures in an induction furnace in nitrogen atmosphere. Some deposition was observed on the crucible cap above 800^oC. Recrystallization of GaN was detected in the deposit at 850^oC probably because Ga metal reacted with an active nitrogen released in the decomposition of GaN. GaN was also obtained by a reaction of Ga metal with nitrogen atmosphere at 1000^oC. The recrystallization was also observed on the GaN powder heated at 850^oC for 1hour in a sealed evacuated tube. Hexagonal platy crystals of about 10μm diameter were obtained.