Heteroepitaxial Growth and Characterization of GaN Films on Single Crystal ZnO Substrates

Takeshi OHGAKI; Naoki OHASHI; Isao SAKAGUCHI; Takashi SEKIGUCHI; Hajime HANEDA

doi:10.14853/pcersj.2003F.0.798.0

16th Fall Meeting of The Ceramic Society of Japan & The 5th International Meeting of Pacific Rim Ceramic Societies(PacRim5)

Session ID : 15-P-11

DOI https://doi.org/10.14853/pcersj.2003F.0.798.0

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Host: The Ceramic Society of Japan

Heteroepitaxial Growth and Characterization of GaN Films on Single Crystal ZnO Substrates

*Takeshi OHGAKI, Naoki OHASHI, Isao SAKAGUCHI, Takashi SEKIGUCHI, Hajime HANEDA

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Abstract

Gallium nitride (GaN) films were grown on zinc oxide (ZnO) single crystals with 0001 orientation using MBE method. The results of XRD and x-ray pole figure measurement indicate that the GaN films are grown epitaxially on the ZnO 0001 substrates. The optical properties of these films were investigated by photoluminescence spectra. In these films, strong band-edge emission in the UV region was observed, and the intensity of visible emission was very low.

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