SiC ceramics sintered with B, C and Metal Borides

Abstract

SiC ceramics sintered with B, C and metal borides/OH. Tanaka, N. Hirosaki and T. Nishimura (NIMS)/ SiC powders mixed with metal borides were sintered at 1800-2200°C. MoB, NbB2, TaB2, TiB2, VB2, WB and ZrB2 promoted densification of SiC powder. Adding a fairly large amount of borides, such as 2-6 vol% WB, 0.8-2.5 vol%B and 3 vol%C, enabled us to control grain growth and densify SiC powder at 2000°C. The sintered SiC materials with a large amount of metal borides, B and C had high fracture toughness.