Development of high temperature AE sensor using AlN thin films

Abstract

Aluminum nitride (AlN) thin films were prepared on Silicon substrates by rf magnetron sputtering. AE sensors using the AlN thin films show low sensitivity as compared with a commercial AE sensor. However, the AlN AE sensors indicate the same wave form and frequency response as a commercial AE sensor. Furthermore, the AlN AE sensors have good sensitivity at 600°C in the air. The AlN AE sensors have been offered commercially since September, 2002.