Abstract
P(O2) or oxygen chemical potential variation in Ce0.8M0.2O2-δ (M; Sm and Y) under SOFC operating conditions was determined using Raman spectroscopy, by which the information of oxygen vacancies can be obtained. Under open-circuit conditions, the P(O2) variation revealed that oxygen chemical potential was quite low in most part of the sample and thus only a thin layer remained as electronically insulating near the sample/air interface.