Host: The Ceramic Society of Japan
The initiation sites for tunnel pitting on Al were controlled by patterning the masking film on Al. This process includes the formation of a thin insulating film (poly chloroplene, PC) on an elastomeric hole-array stamp and the transfer of the film to Al by contact printing. The PC film with the hole-array configuration functioned as a mask for the electrochemical etching of Al, and highly ordered tunnel pits with 5 µm intervals were obtained. This method will be useful for the fabrication of highly ordered tunnel pits on Al, which optimizes the surface area of Al for electrolytic capacitors.
