Abstract
Bridgestone Corporation has established a unique mass production process of pure (6N) silicon carbide (SiC) powder (precursor method). We also invented a new sintering method for obtaining ultra-high purity SiC sintered body using non-metallic sintering agent. We will describe outline of the process, characteristics of the SiC products and some applications. The products has already been widely accepted by major semiconductor device makers and tool makers. We will also touch upon the development of single crystal silicon carbide wafer of extremely high purity.