Abstract
Pb(Zr,Ti)O3 (PZT) thin films were deposited by MOCVD on the seeded Pt/IrO2/SiO2/Si substrates. The seed layers, i.e. SrTiO3, were deposited by PLD. Optimization of the seed kinds, the seed-layer deposition condition and the PZT deposition condition enabled to achieve very low crystallization temperature, 290 oC, of PZT. The SrTiO3 seed deposited at 500 oC, few nm was accelerating the crystallization at the seed layer - PZT thin film interface. Lower growth rate of PZT film was also important to keep growing the crystallized PZT film.
