Synthesis and oxide ion conduction property of LaSr(Ga,In,Mg)O_4-d compounds

Abstract

LaSrGa_1-xMg_xO_4-d consists of the same elements as La_0.9Sr_0.1Ga_0.8Mg_0.2O_2.85 and has similar crystal structure.La_0.9Sr_0.1Ga_0.8Mg_0.2O_2.85 is superior oxide ion conductor, therefore it is expected that LaSrGa_1-xMg_xO_4-d exhibits highly oxide ion conducting property. The author expects that the conductivity of Mg-doped LaSrInO₄ derived from cell volume is higher than that of Mg-doped LaSrGaO4.In this presentation, we report synthesis and oxide ion conduction property of LaSrGa_1-xMg_xO_4-d(0 ≤ x ≤ 0.15) and LaSrIn_0.8-yGa_0.2Mg_yO_4-d (0 ≤ y ≤ 0.15) .