Preparation of boron phosphide thin film on Si and sapphire substrate by CVD process

Yukinobu Kumashiro; Tatsushi Enomoto; Yuko Akasaka; Masayuki Tanaka; Kota Sato

doi:10.14853/pcersj.2004S.0.56.0

Preprints of Annual Meeting of The Ceramic Society of Japan, 2004

Session ID : 1C36

DOI https://doi.org/10.14853/pcersj.2004S.0.56.0

Conference information

Host: The Ceramic Society of Japan

Preparation of boron phosphide thin film on Si and sapphire substrate by CVD process

*Yukinobu Kumashiro, Tatsushi Enomoto, Yuko Akasaka, Masayuki Tanaka, Kota Sato

Author information

Keywords: boron phosphide thin film, CVD process, conduction type

CONFERENCE PROCEEDINGS FREE ACCESS

Details

Abstract

Boron phosphide(BP)films were grown on Si and sapphire substrates by thermal decomposition of a B₂H₆-PH₃ mixture in hydrogen at high temperature. The crystal quality and electrical properties of the BP films were studied. The conductivity type of BP on Si was almost n-type, but that BP on sapphire was p-type. Therefore, it is considered that Si doping during the growth act as donors in BP film.

Corresponding author

Register with J-STAGE for free!