Photoelectrochemical properties and band structure of Zr-transition metal (Nb, Mo, Ta, W) alloy oxide films

Abstract

The microalloying effects of transition metals, M (M: Nb, Mo, Ta, W) on the photoelectrochemical properties of zirconium oxide were investigated. Button ingots of zirconium-5mol% M that made from high-purity metals (99.9% purity) by arc melting in a purified argon atmosphere were cut and homogenized. Subsequently, the specimen surface was polished and cleaned ultrasonically, and oxidized at 1173 K for 30 minutes in Air.The photocurrent was evaluated at room temperature under the irradiation of Xe lamp. In the case of Zr-Nb, the value of the flat band potential was higher than that of pure zirconium.