Electron density distribution in alpha silicon nitride through synchrotron powder diffraction data.

Abstract

Silicon nitride (Si₃N₄) continues to attract many researchers because of interesting mechanical and dielectric properties. The purpose of this work is to study the electron-density distribution of alpha-Si3N4 using synchrotron powder diffraction data. The covalent bonding between Si and N atoms is observed in the electron-density distribution of alpha-Si₃N₄) for the first time in the present study.Commercial silicon nitride powders (SN-R10, Ube Industrial Co., Ube, Japan) were utilized for a synchrotron powder diffraction measurement. The synchrotron powder diffraction experiment was carried out at 26oC on the beamline BL-4B2 at the Photon Factory, Tsukuba, Japan.