Abstract
We have investigated Y2O3 thin films as a buffer layer to grow ferroelectric films on a Si substrate for ferroelectric gate FETs which are expected to be a novel non-volatile memory device. Since good dielectric properties and high crystallinity are required for the buffer layer, epitaxially grown Y2O3 films are desired. In this study, Y2O3 epitaxial films were grown by two step process to prevent the oxidization of the Si surface. Although the dielectric properties indicate the formation of the low dielectric layer, the oxidization of the Si surface could be suppressed by the substrate treatment using (NH4)2SO3. Other investigations to suppress the formation of the low dielectric layer are also discussed.
