Low Temperature Formation and Dielectric Properties of Silicon Nitride Films Fabricated using Nitrogen Plasma near Atmospheric Pressure

Abstract

Stable discharging of pure nitrogen can be maintained even at atmospheric pressure when alternative pulsed voltage is applied between two parallel plate electrodes. From optical emission spectroscopy, emissions from the N₂ 2nd positive and Herman's infrared systems were observed. Using this atmospheric pressure plasma, 1.8 nm-thick silicon nitride film was obtained at a temperature as low as 25ºC, and the thickness was regardless of the temperature. The thickness change against the pressure well corresponds to the change in emissions from the N₂ 2nd positive system. We conclude that excited species generated through N₂ 2nd positive system contribute to silicon nitridation and that it has extremely high reactivity. Furthermore, the leakage current density of the films was lower by one order of magnitude than those of previously reported silicon nitride films.