Gas sensing property with B- and P-doped SiGe Thin Film deposited by Helicon Sputtering

Kazuki Tajima; Woosuck Shin; Maiko Nishibori; Norimitsu Murayama; Toshio Itoh; Noriya Izu; Ichiro Matsubara

doi:10.14853/pcersj.2005F.0.705.0

18th Fall Meeting of The Ceramic Society of Japan & 1st Asia-Oceania Ceramic Federation (AOCF) Conference

Session ID : 2R07

DOI https://doi.org/10.14853/pcersj.2005F.0.705.0

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Host: The Ceramic Society of Japan

Gas sensing property with B- and P-doped SiGe Thin Film deposited by Helicon Sputtering

*Kazuki Tajima, Woosuck Shin, Maiko Nishibori, Norimitsu Murayama, Toshio Itoh, Noriya Izu, Ichiro Matsubara

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Keywords: SiGe, thermoelectric property, mico-thermoelectric hydrogen sensor, helicon sputtering

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Abstract

We prepared the micro-thermoelectric hydrogen sensor with the combination of the thermoelectric effect of SiGe thin film and the Pt-catalyzed exothermic reaction of hydrogen oxidation. Sensitivity The thermoelectric properties of the SiGe thin film could be improved by optimizing carrier concentration using RF-sputtering method with induction coil as advantage of easily controllability of high doping, and sensitivity of the device in this work was larger than that of the device with SiGe thermoelectric thin film using conventional RF-sputtering method.

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