Fabrication and characterization of deep-UV transparent field-effect transistor using wide bandgap semiconductor Ga2O3

Preprints of Annual Meeting of The Ceramic Society of Japan
Preprints of Fall Meeting of The Ceramic Society of Japan

Annual Meeting of The Ceramic Society of Japan, 2005

Session ID : 3B19

DOI https://doi.org/10.14853/pcersj.2005S.0.369.0

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Host: The Ceramic Society of Japan

Fabrication and characterization of deep-UV transparent field-effect transistor using wide bandgap semiconductor Ga2O3

*Kosuke Matsuzaki, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

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Keywords: Transparent Oxide Semiconductor, Transparent Field Effect Transistor, PLD

CONFERENCE PROCEEDINGS FREE ACCESS

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[in Japanese]

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© The Ceramic Society of Japan 2005

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