Abstract
Weight changes during high temperature oxidation of SiC in Ar-H2O and Ar-H2O-O2 gas flows were less than those in dry Ar-O2 gas flows. Oxidation of SiC was slower in case of flowing dry Ar-O2 gas after heating SiC than in case of heating SiC after flowing dry Ar-O2 gas. In dry Ar-O2 gas flow, oxidation rate dropped suddenly. Evolution of CO2 or SiO gas was detected at the initial stage of oxidation in dry Ar-O2 gas flow, while less CO2 or SiO gas evolution was detected after the sudden drop of oxidation rate. No marked change of CO2 or SiO gas concentration was observed during oxidation of SiC in Ar-H2O and Ar-H2O-O2 gas flows.
