Preparation of Niobium Oxide Thin Films by Sol-Gel Methods.

Abstract

Niobium oxide thin films were prepared by sol-gel methods. These films are important materials for the metal insulator metal (MIM) capacitor of giga-bit dynamic random access memory (DRAM). Niobium chloride, which is low cost material, was used as a starting material. And all process carried out in the air atmasphere. The crystalline and transparaent niobium oxide films could be obtained at the sintered temperature of 600 degree centigrade.